2SD365 Datasheet - INCHANGE

datasheet Preview Page 1 from Datasheet4u.com

2SD365 NPN Transistor

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD365 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Low Collector Saturation Voltage- : VCE(sat)= 1. Complement.

2SD365-INCHANGE.pdf

2SD365 Datasheet Preview — Preview of 2SD365 PDF

Datasheet Details

Part number:

2SD365

Manufacturer:

INCHANGE

File Size:

206.19 KB

Description:

NPN Transistor

Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissip

2SD365 Distributors

📁 Related Datasheet

2SD360 2SD361 2SD362 2SD363 2SD30 2SD311

📌 All Tags

2SD365 NPN Transistor INCHANGE

INCHANGE 2SD365-like datasheet