2SD365 - NPN Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) *Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 2.0A *Complement to Type 2SB512 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for low frequency p
