2SD316 - NPN Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) *Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 5.0A *Excellent Safe Operating Area *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for hig
