2SD316 Datasheet - INCHANGE

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2SD316 NPN Transistor

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD316 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Exc.

2SD316-INCHANGE.pdf

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Datasheet Details

Part number:

2SD316

Manufacturer:

INCHANGE

File Size:

175.52 KB

Description:

NPN Transistor

Applications

* Designed for high power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector

2SD316 Distributors

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2SD316 NPN Transistor INCHANGE

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