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2SD316 - NPN Transistor

2SD316 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD316 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Exc.

2SD316 Applications

* Designed for high power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector

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Datasheet Details

Part number
2SD316
Manufacturer
INCHANGE
File Size
175.52 KB
Datasheet
2SD316-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD316-like datasheet