Datasheet Details
| Part number | 2SD316 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 175.52 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD316 Datasheet
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| Part number | 2SD316 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 175.52 KB |
| Description | NPN Transistor |
| Datasheet |
2SD316 Datasheet
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|
|
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 5.0A Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emit
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