Datasheet4U Logo Datasheet4U.com

2SD320

NPN Transistor

2SD320 General Description


*Collector-Emitter Breakdown Voltage- : V(BR) CEO= 230V(Min)
*Excellent Safe Operating Area
*Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC = 2A
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for us.

2SD320 Datasheet (189.58 KB)

Preview of 2SD320 PDF

Datasheet Details

Part number:

2SD320

Manufacturer:

INCHANGE

File Size:

189.58 KB

Description:

Npn transistor.

📁 Related Datasheet

2SD325 - Silicon NPN Power Transistors (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD325 DESCRIPTION ·With TO-220C package ·Complement to type 2SB511 ·Lo.

2SD325 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor 2SD325 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·Low Collector-Emitter Saturation Vol.

2SD328 - NPN/PNP SILICON TRANSISTOR (ETC)
.

2SD30 - NPN Transistor (Sanyo Semiconductor)
.. .

2SD310 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD310 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High.

2SD311 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor 2SD311 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed ·Minim.

2SD312 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD312 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V(Min) ·Fast Sw.

2SD313 - NPN Transistor (UTC)
UNISONIC TECHNOLOGIES CO., LTD 2SD313 NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and .

TAGS

2SD320 NPN Transistor INCHANGE

Image Gallery

2SD320 Datasheet Preview Page 2

2SD320 Distributor