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2SD320 NPN Transistor

2SD320 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD320 .
Collector-Emitter Breakdown Voltage- : V(BR) CEO= 230V(Min). Excellent Safe Operating Area. Low Collector-Emitter Saturation Voltage- : V.

2SD320 Applications

* Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A I

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Datasheet Details

Part number
2SD320
Manufacturer
INCHANGE
File Size
189.58 KB
Datasheet
2SD320-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD320-like datasheet