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2SD314 - NPN Transistor

2SD314 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD314 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Com.

2SD314 Applications

* Designed for the output stage of 15W to 25W AF power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage 60 V 60 V 5 V IC Collector Current-Continuous 3.0 A ICM Collector

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Datasheet Details

Part number
2SD314
Manufacturer
INCHANGE
File Size
187.26 KB
Datasheet
2SD314-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD314-like datasheet