2SD317 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD317 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Min.

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Datasheet Specifications

Part number: 2SD317
Manufacturer: INCHANGE
File Size: 181.14 KB
Datasheet: 2SD317-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage 60 V 60 V 8 V IC Collector Current-Continuous 3.0 A

2SD317 Distributors

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2SD317 NPN Transistor INCHANGE

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