2SD360 - (2SD359 / 2SD360) NPN Transistor
(ETC)
.
2SD361 - NPN Transistor
(ETC)
.
2SD362 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 70V(Min) ·Collector Power Dissipation-
: PC= 40W(Max)@.
2SD363 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Collector Power Dissipation-
: PC= 40W(Max).
2SD365 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD365
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·Low Collector.
2SD30 - NPN Transistor
(Sanyo Semiconductor)
..
.
2SD310 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD310
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min) ·High.
2SD311 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
2SD311
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min) ·High Switching Speed ·Minim.
2SD312 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD312
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 600V(Min) ·Fast Sw.
2SD313 - NPN Transistor
(UTC)
UNISONIC TECHNOLOGIES CO., LTD 2SD313
NPN EPITAXIAL PLANAR TRANSISTOR
DESCRIPTION
The UTC 2SD313 is designed for use in general purpose amplifier and .