2SD315 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 2SD315 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Com.

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Datasheet Specifications

Part number: 2SD315
Manufacturer: INCHANGE
File Size: 205.45 KB
Datasheet: 2SD315-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak PC

2SD315 Distributors

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2SD315 NPN Transistor INCHANGE

INCHANGE 2SD315-like datasheet