2SD313 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 2SD313 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Com.

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Datasheet Specifications

Part number: 2SD313
Manufacturer: INCHANGE
File Size: 209.82 KB
Datasheet: 2SD313-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for the output stage of 15W to 25W AF power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3.0 A ICM Collec

2SD313 Distributors

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2SD313 NPN Transistor INCHANGE

INCHANGE 2SD313-like datasheet