D496 Datasheet | Specifications & PDF Download

AOD496A-VB AOD496A-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.005 at VGS = 10 V 0.006 at VG

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NTD4969N Power MOSFET 30 V, 41 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimi

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www.DataSheet4U.com AOD496 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD496 uses advanced trench technology to provi

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40V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan

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www.DataSheet4U.com Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without pri

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isc N-Channel MOSFET Transistor AOD496 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9.5mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variat

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NTD4963N Power MOSFET Features 30 V, 44 A, Single N−Channel, DPAK/IPAK • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimiz

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isc N-Channel MOSFET Transistor AOD496A FEATURES ·Drain Current –ID= 57A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resi

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Voltage Detector IC Series Standard CMOS Voltage Detector IC BD48xxx series BD49xxx series ●General Description ROHM’s BD48xxx and BD49xxx series are

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D496-VB D496-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.005 at VGS = 10 V 0.006 at VGS = 4.

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www.DataSheet4U.com Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.

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NTD4965N MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 68 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize

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NTD4960N Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features  Low RDS(on) to Minimize Conduction Losses  Low Capacitance to Minimize Dri

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High-accuracy detection voltage Low current consumption CMOS RESET IC BD48XXG BD49XXG 5 4 1pin : RESET output 2pin : Supply voltage 3pin : GND 4pin

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www.DataSheet4U.com Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without pri

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www.DataSheet4U.com Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.

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40V N-Channel MOSFETs PDD4964 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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40V N-Channel MOSFETs PDD4960 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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High-accuracy detection voltage Low current consumption CMOS RESET IC BD48XXG BD49XXG 5 4 1pin : RESET output 2pin : Supply voltage 3pin : GND 4pin

(6 views)

www.DataSheet4U.com Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.

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