D5C Datasheet | Specifications & PDF Download

NVD5C684NL Power MOSFET 60 V, 16.5 mW, 38 A, Single N−Channel Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimi

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NVD5C648NL MOSFET – Power, Single N-Channel 60 V, 4.1 mW, 89 A Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Mini

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MOSFET – Dual, N-Channel 60 V, 14.4 mW, 42 A NTMFD5C674NL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction

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NVD5C668NL Power MOSFET 60 V, 8.9 mW, 49 A, Single N−Channel Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimiz

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NVD5C632NL MOSFET – Power, Single N-Channel 60 V, 2.5 mW, 155 A Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Min

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isc N-Channel MOSFET Transistor NVD5C648NL FEATURES ·Drain Current –ID= 89A@ TC=25℃ ·Drain Source Voltage- VDSS= 60V(Min) ·Static Drain-Source On-Re

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DATA SHEET www.onsemi.com MOSFET - Power, Dual N-Channel 40 V, 7.4 mW, 52 A V(BR)DSS 40 V RDS(ON) MAX 7.4 mW @ 10 V 12.6 mW @ 4.5 V ID MAX 52 A N

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NVD5C434N Power MOSFET 40 V, 2.1 mW, 163 A, Single N−Channel Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimiz

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NVMFD5C462NL MOSFET – Power, Dual N-Channel 40 V, 4.7 mW, 84 A Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Cond

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MOSFET – Power, Dual, N-Channel 40 V, 7.4 mW, 52 A NTMFD5C466NL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Cond

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NVD5C688NL Power MOSFET 60 V, 27.4 mW, 17 A, Single N−Channel Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimi

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NVMFD5C650NL MOSFET – Power, Dual N-Channel 60 V, 4.2 mW, 111 A Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Con

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 49A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance :

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NVMFD5C478N Power MOSFET 40 V, 17.0 mW, 27 A, Dual N−Channel Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Condu

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NVD5C454NL MOSFET – Power, Single, N-Channel, 40 V, 3.9 mW, 88 A Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Mi

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NVD5C446N Power MOSFET 40 V, 3.5 mW, 101 A, Single N−Channel Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimiz

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DATA SHEET www.onsemi.com MOSFET – Power, Dual N-Channel 60 V, 14.4 mW, 42 A V(BR)DSS 60 V RDS(ON) MAX 14.4 mW @ 10 V 20.4 mW @ 4.5 V ID MAX 42 A

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NVD5C486N Power MOSFET 40 V, 17.9 mW, 22 A, Single N−Channel Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimiz

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IGBT film foil structure snubber capacitors „ Outline Drawing „ Construction CAMEL TECHNOLOGY SNUBBER CAPACITORS KPC „ Appearance Plain film Y mi

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IGBT film foil structure snubber capacitors „ Outline Drawing „ Construction CAMEL TECHNOLOGY SNUBBER CAPACITORS KPC „ Appearance Plain film Y mi

(27 views)