D716 Datasheet | Specifications & PDF Download

2SD716 GENERAL DESCRIPTION SILICON EPITAXIAL PLANAR TRANSISTOR Silicon NPN high frequency, high power transistors in a plastic envelope, primarily f

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Low Collector-Emitter Saturation Voltage-

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: SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES • Complementary to 2SB686. • Recommended for 30 ^ 35W High-Fidelity Audio F

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD716 www.datasheet4u.com DESCRIPTION ·With TO-3P(I) package ·Complem

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MSD7xx Series Step Recovery Diode Features  Low Transition Time  High Efficiency  High Cutoff Frequency  High Reliability  RoHS* Compliant Descri

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