2SD716 GENERAL DESCRIPTION SILICON EPITAXIAL PLAN.
INCHANGE
2SD716 - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Low Collector-Emitter Saturation Voltage- .
Wing Shing Computer Components
D716 - 2SD716
2SD716 GENERAL DESCRIPTION SILICON EPITAXIAL PLANAR TRANSISTOR Silicon NPN high frequency, high power transistors in a plastic envelope, primarily f.
SavantIC
2SD716 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD716 www.datasheet4u.com DESCRIPTION ·With TO-3P(I) package ·Complem.
MA-COM
MSD716 - Step Recovery Diode
MSD7xx Series Step Recovery Diode Features Low Transition Time High Efficiency High Cutoff Frequency High Reliability RoHS* Compliant Descri.
Toshiba
2SD716 - NPN Transistor
: SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES • Complementary to 2SB686. • Recommended for 30 ^ 35W High-Fidelity Audio F.