2SD716 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2. Com.

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Datasheet Specifications

Part number: 2SD716
Manufacturer: INCHANGE
File Size: 215.38 KB
Datasheet: 2SD716-INCHANGE.pdf
Description: NPN Transistor

Applications

* Power amplifier applications
* Recommended for 30~35W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC

2SD716 Distributors

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2SD716 NPN Transistor INCHANGE

INCHANGE 2SD716-like datasheet