2SD726 Silicon NPN Power Transistor

INCHANGE

Description

isc Silicon NPNPower Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min). High Power Dissipation. Complement to Type 2SB690. Minimum Lot-to-Lot var.

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Datasheet Specifications

Part number: 2SD726
Manufacturer: INCHANGE
File Size: 213.13 KB
Datasheet: 2SD726-INCHANGE.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current

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2SD726 Silicon NPN Power Transistor INCHANGE

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