WTE POWER SEMICONDUCTORS DD300/S – DD306/S 30A .
3DD303B - Silicon Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector-Emitter Saturation Voltage- : VCE(.DD303S - DISH DIODE
WTE POWER SEMICONDUCTORS DD300/S – DD306/S 30A 8.4mm/9.5mm DISH DIODE Features ! Glass Passivated Die Construction ! Low Leakage ! Low Cost ! High S.3DD303A - Silicon Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Collector-Emitter Saturation Voltage- : VCE(.3DD303C - Silicon Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE.DD303 - DISH DIODE
WTE POWER SEMICONDUCTORS DD300/S – DD306/S 30A 8.4mm/9.5mm DISH DIODE Features ! Glass Passivated Die Construction ! Low Leakage ! Low Cost ! High S.