DD303 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector-Emitter Saturation Voltage- : VCE(

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WTE POWER SEMICONDUCTORS DD300/S – DD306/S 30A 8.4mm/9.5mm DISH DIODE Features Glass Passivated Die Construction Low Leakage Low Cost High S

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Collector-Emitter Saturation Voltage- : VCE(

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE

(13 views)

WTE POWER SEMICONDUCTORS DD300/S – DD306/S 30A 8.4mm/9.5mm DISH DIODE Features Glass Passivated Die Construction Low Leakage Low Cost High S

(10 views)