DD501 Datasheet | Specifications & PDF Download

CASE-RATED BIPOLAR TRANSISTOR 3DD5011 FOR LOW FREQUENCY AMPLIFICATION R 3DD5011 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 900V 10 A 0.5 V(max) 0.

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Huajing Discrete Devices ○R Silicon NPN Bipolar Transistor for Low-frequency Amplification 3DD5011A9 1 Description： 3DD5011A9, silicon NPN low fr

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Huajing Discrete Devices ○R Silicon NPN Bipolar Transistor for Low-frequency Amplification 3DD5011AH 1 Description： 3DD5011AH, silicon NPN low fr

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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017P FOR LOW FREQUENCY R 3DD5017P MAIN CHARACTERISTICS Package TO-3P(H)IS BVCBO IC VCE(sat) tf 1000

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3DD5017 1. 3DD5017 NPN ，， 。： ● 、 ● ● ● ● ：TO-3P(H)IS 2. 15.5max 5.5max 3max Φ3.6 26.5max 4.5 2.1 ，Tamb= 25℃ - VCE0 650

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R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017 FOR LOW FREQUENCY 3DD5017 Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃ; z ²ÊÉ«µçÊÓ»ú¿

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