DF10 Datasheet | Specifications & PDF Download

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MDF10N65B N-channel MOSFET 650V MDF10N65B N-Channel MOSFET 650V, 10.0A, 1.0Ω General Description The MDF10N65B MOSFET are produced using advanced Ma

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MDF10N60G N-channel MOSFET 600V MDF10N60G N-Channel MOSFET 600V, 10A, 0.7Ω General Description These N-channel MOSFET are produced using advanced Ma

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Magnachip Power Technology MDF10N055TH MDF10N055TH Single N-channel Trench MOSFET 100V 5.5mΩ 80A General description The MDF10N055TH uses advanced M

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SanRex® Three Phase Rectifier Bridge Module (Low Profile of 17mm height) DF100AC series IF(AV)= 100A, VRRM= 800- 1800V SanRex Three Phase Rectifier

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DF1005 THRU DF110 1A Miniature Glass Passivated Single-Phase Bridge Rectifiers ■ Features • Surge overload ratings to 30 amperes peak. • Recommended

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NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 0.65 W, 600 Volts Features • • • • • • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected G

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www.DataSheet4U.com NDF10N62Z, NDP10N62Z N-Channel Power MOSFET 620 V, 0.65 W Features • • • • • Low ON Resistance Low Gate Charge Zener Diode−prot

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MDF10N60B N-channel MOSFET 600V MDF10N60B N-Channel MOSFET 600V, 10A, 0.7Ω General Description These N-channel MOSFET are produced using advanced Ma

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DF1005 THRU DF110 1A Miniature Glass Passivated Single-Phase Bridge Rectifiers ■ Features • Surge overload ratings to 30 amperes peak. • Recommended

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www.DataSheet4U.com Bussmann® Disconnect Switch Fusible, 60-100A, 600V BDF60 and BDF100 BDF60J6 Components: Catalog Symbols*: BDF60J6, BDF100JT6 A

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MDF10N50 N-channel MOSFET 500V MDF10N50 N-Channel MOSFET 500V, 10 A, 0.75Ω General Description The MDF10N50 uses advanced MagnaChip’s MOSFET Technol

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DF100AA120 Three Phases Rectifying Bridge Module FEATURES ·The chips are electrically insulated from bosom plate ,2500V AC voltage ·High surge current

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Features Ideal for printed circuit boards Applicable for automative insertion High surge current capability Solder Dip 260 40seconds DF005 thru DF10

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DF1000R17IE4 PrimePACK™3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode PrimePACK™3 module with Trench/Fieldstop IGBT4 and Emitter Cont

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® WON-TOP ELECTRONICS DF005S – DF10S 1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Pb Features  Glass Passivated Die Construction  Low Forw

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KD2004-DF10A Printheads Compact medium speed thick film thermal printhead (8 dots / mm) KD2004-DF10A Using its expertise in LSI technology, ROHM has

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Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP10N60 SDF10N60 Ver 1.1 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ

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DF02 THRU DF10 GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 200 to 1000 Volts Forward Current - 1.0 Ampere DFM -+ .031(0.8) .024(0.6) ~~

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DF100R07W1H5FP_B53 EasyPACK™ Modul mit TRENCHSTOP™ 5 H5 und CoolSiC™ Diode und PressFIT / bereits aufgetragenem Thermal Interface Material EasyPACK™ m

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