Features Low On-Resistance Low Gate Thresh.
Diodes
DMG1012T - N-Channel MOSFET
Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected up.
VBsemi
DMG1012T - N-Channel MOSFET
DMG1012T DMG1012T N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX. 0.270 at VGS = 4.5 V 20 0.390 at VGS = 2.5 V ID (A) c 0.8.
