DMN95H8D5HCT Datasheet | Specifications & PDF Download

NOT RECOMMENDED FOR NEW DESIGN NO ALTERNATE PART DMN95H8D5HCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 950V RDS(ON) 7Ω@VGS = 10V

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DMN95H8D5HCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS (@ TJ Max) 1000V RDS(ON) 7Ω@VGS = 10V ID TC = +25°C 2.5A Description This ne

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isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 950V(Min) ·Fast Switching Speed ·100% avalan

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isc N-Channel MOSFET Transistor DMN95H8D5HCTI FEATURES ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 950V(Min) ·Static Drain-Sourc

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