DP1.2 Datasheet | Specifications & PDF Download

E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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DP1801B Quasi-Resonant PSR CC/CV PWM Power Switch FEATURES  Low Cost Solution Built-in 800V power BJT  Quasi-Resonant Primary Side Regulation (QR-P

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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NDP1340KC 4A,34V High Efficiency Synchronous Step-Down DC/DC Converter Description Features NDP1340KC is a high efficiency, Z monolithic synchrono

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Data Sheet Synchronous, Step-Down DC-to-DC Controller with Voltage Tracking and Synchronization ADP1853 FEATURES Input voltage range: 2.75 V to 20 V

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MDP10N055TH– Single N-Channel Trench MOSFET 100V MDP10N055 Single N-channel Trench MOSFET 100V, 120A, 5.5mΩ General Description Features The MDP10

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DP1800 Quasi-Resonant PSR CC/CV PWM Power Switch FEATURES  Low Cost Solution Built-in 800V power BJT  Quasi-Resonant Primary Side Regulation (QR-PS

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NDP1331KC 2.8A,34V High Efficiency Synchronous Step-Down DC/DC Converter Description Features NDP1331KC is a high efficiency, Z monolithic synchro

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07722-001 Data Sheet FEATURES Maximum output current: 1.2 A Input voltage range: 1.6 V to 3.6 V Low shutdown current: <2 µA Very low dropout voltage:

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MDP13N50 N-channel MOSFET 500V MDP13N50 N-Channel MOSFET 500V, 13.0A, 0.5Ω General Description The MDP13N50 uses advanced Magnachip’s MOSFET Technol

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MDP1991– Single N-Channel Trench MOSFET 100V MDP1991 Single N-channel Trench MOSFET 100V, 120A, 5.9mΩ General Description The MDP1991 uses advanced

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NDP1360KC 6A,34V High Efficiency Synchronous Step-Down DC/DC Converter Description Features NDP1360KC is a high efficiency, Z monolithic synchrono

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DATASHEET CDP1802AC/3 High-Reliability CMOS 8-Bit Microprocessor FN1441 Rev 3.00 October 17, 2008 The CDP1802A/3 High-Reliability LSI CMOS 8-bit re

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NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 0.65 W, 600 Volts Features • • • • • • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected G

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FDP12N50 / FDPF12N50T N-Channel MOSFET May 2012 FDP12N50 / FDPF12N50T N-Channel MOSFET 500V, 11.5A, 0.65Ω Features • RDS(on) = 0.55Ω (Typ.)@ VGS = 1

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MDP10N027TH– Single N-Channel Trench MOSFET 100V ` MDP10N027 Single N-channel Trench MOSFET 100V, 120A, 2.8mΩ General Description Features The MDP

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www.DataSheet4U.com NDF10N62Z, NDP10N62Z N-Channel Power MOSFET 620 V, 0.65 W Features • • • • • Low ON Resistance Low Gate Charge Zener Diode−prot

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