DP1.2 Datasheet | Specifications & PDF Download

E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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DP1801B Quasi-Resonant PSR CC/CV PWM Power Switch FEATURES  Low Cost Solution Built-in 800V power BJT  Quasi-Resonant Primary Side Regulation (QR-P

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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DP1800 Quasi-Resonant PSR CC/CV PWM Power Switch FEATURES  Low Cost Solution Built-in 800V power BJT  Quasi-Resonant Primary Side Regulation (QR-PS

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MDP1991– Single N-Channel Trench MOSFET 100V MDP1991 Single N-channel Trench MOSFET 100V, 120A, 5.9mΩ General Description The MDP1991 uses advanced

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MDP10N055TH– Single N-Channel Trench MOSFET 100V MDP10N055 Single N-channel Trench MOSFET 100V, 120A, 5.5mΩ General Description Features The MDP10

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Through Hole Lamp Product Data Sheet LTL-42D1NMHDP1 Spec No. :DS-20-97-0134 Effective Date: 06/20/2017 Revision: E LITE-ON DCC RELEASE BNS-OD-FC001/A4

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NDP1340KC 4A,34V High Efficiency Synchronous Step-Down DC/DC Converter Description Features NDP1340KC is a high efficiency, Z monolithic synchrono

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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www.vishay.com MDP 01, 03, 05 Vishay Dale Thick Film Resistor Networks, Dual-In-Line, Molded DIP FEATURES • Isolated, bussed, and dual terminator

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www.vishay.com MDP 01, 03, 05 Vishay Dale Thick Film Resistor Networks, Dual-In-Line, Molded DIP FEATURES • Isolated, bussed, and dual terminator

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07722-001 Data Sheet FEATURES Maximum output current: 1.2 A Input voltage range: 1.6 V to 3.6 V Low shutdown current: <2 µA Very low dropout voltage:

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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PI3USB30532 3.3V, USB3.0/DP1.2 6:4 Matrix Switch Features ÎÎ6 Differential Channel to 2/4 Differential Channel Matrix Switch ÎÎUSB 3.0 5Gb/s Super Sp

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MDP1932– Single N-Channel Trench MOSFET 80V MDP1932 Single N-channel Trench MOSFET 80V, 120A, 3.4mΩ General Description The MDP1932 uses advanced Ma

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MDP1933– Single N-Channel Trench MOSFET 80V MDP1933 Single N-channel Trench MOSFET 80V, 105A, 7.0mΩ General Description The MDP1933 uses advanced Ma

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MDP10N027TH– Single N-Channel Trench MOSFET 100V ` MDP10N027 Single N-channel Trench MOSFET 100V, 120A, 2.8mΩ General Description Features The MDP

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