DP1.4 Datasheet | Pinout, Features, Price Comparison & PDF

E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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DP1801B Quasi-Resonant PSR CC/CV PWM Power Switch FEATURES  Low Cost Solution Built-in 800V power BJT  Quasi-Resonant Primary Side Regulation (QR-P

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DP1800 Quasi-Resonant PSR CC/CV PWM Power Switch FEATURES  Low Cost Solution Built-in 800V power BJT  Quasi-Resonant Primary Side Regulation (QR-PS

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www.vishay.com MDP 01, 03, 05 Vishay Dale Thick Film Resistor Networks, Dual-In-Line, Molded DIP FEATURES • Isolated, bussed, and dual terminator

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MDP10N055TH– Single N-Channel Trench MOSFET 100V MDP10N055 Single N-channel Trench MOSFET 100V, 120A, 5.5mΩ General Description Features The MDP10

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MDP1991– Single N-Channel Trench MOSFET 100V MDP1991 Single N-channel Trench MOSFET 100V, 120A, 5.9mΩ General Description The MDP1991 uses advanced

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NDP1340KC 4A,34V High Efficiency Synchronous Step-Down DC/DC Converter Description Features NDP1340KC is a high efficiency, Z monolithic synchrono

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MDP1932– Single N-Channel Trench MOSFET 80V MDP1932 Single N-channel Trench MOSFET 80V, 120A, 3.4mΩ General Description The MDP1932 uses advanced Ma

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DP1903 DP1903RGB LED，MCU、、 LED 。MCU、。  17 V  ，IC VDD  （256）  RC，，   PWM256，400 Hz / s  ，GAMMA。  ，  10  30 / ，512，1024  400 Kbps800 Kb

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MDP1933– Single N-Channel Trench MOSFET 80V MDP1933 Single N-channel Trench MOSFET 80V, 105A, 7.0mΩ General Description The MDP1933 uses advanced Ma

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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IDP15E60 Fast Switching Emitter Controlled Diode Features • 600V Emitter Controlled technology • Fast recovery • Soft switching • Low reverse recover

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NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 0.65 W, 600 Volts Features • • • • • • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected G

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MDP10N027TH– Single N-Channel Trench MOSFET 100V ` MDP10N027 Single N-channel Trench MOSFET 100V, 120A, 2.8mΩ General Description Features The MDP

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NDP1435KC 3.5A,40V High Efficiency Synchronous Step-Down DC/DC Converter Description Features NDP1435KC is a high efficiency, Z monolithic synchro

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www.vishay.com MDP 01, 03, 05 Vishay Dale Thick Film Resistor Networks, Dual-In-Line, Molded DIP FEATURES • Isolated, bussed, and dual terminator

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MDP14N25C N-channel MOSFET 250V MDP14N25C N-Channel MOSFET 250V, 14A, 0.28Ω General Description The MDP14N25C is produced using advanced MagnaChip’s

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