DP100 Datasheet | Specifications & PDF Download

www.DataSheet4U.com Semiconductor DP100 PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.25V

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FDP100N10 — N-Channel PowerTrench® MOSFET FDP100N10 N-Channel PowerTrench® MOSFET 100 V, 75 A, 10 mΩ November 2013 Features • RDS(on) = 8.2 mΩ (Typ

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Semiconductor DP100S PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.25V Typ. @IC /IB =-400m

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DIP Switches GDP Series, Piano Actuator, THT & SMT Features I I Bifurcated gold wiping contact system (gold to gold contact system) Available in pc

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor FDP100N10 ·FEATURES ·With TO-220 packaging ·Low switching loss ·Ultra low gate charge ·Easy t

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