FDP100N10 Datasheet - INCHANGE

FDP100N10, N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor FDP100N10 *

Features

* With TO-220 packaging
* Low switching loss
* Ultra low gate charge
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operationz

Applications

* Switching applications
* AC-DC converters
* LED lighting
* Uninterruptible power supply
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous @Tc=75℃ 75 IDM Drain Current-Single

FDP100N10-INCHANGE.pdf