FDP120AN15A0
Fairchild Semiconductor
186.43kb
N-channel powertrench mosfet.
TAGS
📁 Related Datasheet
FDP120N10 - MOSFET
(Fairchild Semiconductor)
FDP120N10 — N-Channel PowerTrench® MOSFET
FDP120N10
N-Channel PowerTrench® MOSFET
100 V, 74 A, 12 mΩ
November 2013
Features
• RDS(on) = 9.7 mΩ (Typ.
FDP120N10 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FDP120N10
·FEATURES ·With TO-220 packaging ·Drain Source Voltage-
: VDSS ≥ 100V ·Static drain-source on-resistance:
.
FDP12N35 - 350V N-Channel MOSFET
(Fairchild Semiconductor)
FDP12N35 / FDPF12N35 350V N-Channel MOSFET
FDP12N35 / FDPF12N35
350V N-Channel MOSFET
Features
• 12A, 350V, RDS(on) = 0.38Ω @VGS = 10 V • Low gate ch.
FDP12N50 - N-Channel MOSFET
(Fairchild Semiconductor)
FDP12N50 / FDPF12N50 N-Channel MOSFET
June 2007
FDP12N50 / FDPF12N50
N-Channel MOSFET
500V, 11.5A, 0.65Ω Features
• RDS(on) = 0.55Ω (Typ.)@ VGS = 10.
FDP12N50F - N-Channel MOSFET
(Fairchild Semiconductor)
FDP12N50F / FDPF12N50FT N-Channel MOSFET
December 2007
UniFETTM
FDP12N50F / FDPF12N50FT
N-Channel MOSFET
500V, 11.5A, 0.7Ω Features
• RDS(on) = 0.59.
FDP12N50NZ - N-Channel MOSFET
(Fairchild Semiconductor)
FDP12N50NZ / FDPF12N50NZ — N-Channel UniFETTM II MOSFET
FDP12N50NZ / FDPF12N50NZ
N-Channel UniFETTM II MOSFET
500 V, 11.5 A, 520 m
August 2016
Fe.
FDP12N50NZ - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% .
FDP12N60NZ - N-Channel MOSFET
(Fairchild Semiconductor)
FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET
March 2013
FDP12N60NZ / FDPF12N60NZ
N-Channel UniFETTM II MOSFET
600 V, 12 A, 650 m Features.
FDP100N10 - MOSFET
(Fairchild Semiconductor)
FDP100N10 — N-Channel PowerTrench® MOSFET
FDP100N10
N-Channel PowerTrench® MOSFET
100 V, 75 A, 10 mΩ
November 2013
Features
• RDS(on) = 8.2 mΩ (Typ.
FDP100N10 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
FDP100N10
·FEATURES ·With TO-220 packaging ·Low switching loss ·Ultra low gate charge ·Easy t.