FDP18N50

N-Channel MOSFET

ON Semiconductor

FDP18N50 Features

* RDS(on) = 220 mW (Typ.) @ VGS = 10 V, ID = 9 A

* Low Gate Charge (Typ. 45 nC)

* Low Crss (Typ. 25 pF)

* 100% Avalanche Tested

* These Devices are Pb

* Free and are RoHS Compliant Applications

* LCD/LED/PDP TV

* Lighting

* Uninte

FDP18N50 General Description

UniFET MOSFET is onsemi's high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on

*state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power convert.

FDP18N50 Datasheet (514.93 KB)