FDP120N10

MOSFET

Fairchild Semiconductor

FDP120N10 Features

* RDS(on) = 9.7 mΩ (Typ.) @ VGS = 10 V, ID = 74 A

* Fast Switching Speed

* Low Gate Charge

* High Performance Trench Technology for Extremely Low RDS(on)

* High Power and Current Handling Capability

* RoHS Compliant Description This N-Channel MOSFET i

FDP120N10 General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications

* Synchronous Rectification for ATX / Server / Telecom PSU

* Batte.

FDP120N10 Datasheet (607.42 KB)

FDP120N10 Datasheet Preview — Preview of FDP120N10 PDF

Datasheet Details

Part number:

FDP120N10

Manufacturer:

Fairchild Semiconductor

File Size:

607.42 KB

Description:

Mosfet.

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FDP120N10 MOSFET Fairchild Semiconductor

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FDP120N10 Features

FDP120N10 General Description

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