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FDP12N35, FDPF12N35 - 350V N-Channel MOSFET

Fairchild Semiconductor

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FDP12N35 Datasheet Preview — This datasheet PDF includes multiple part numbers: FDP12N35, FDPF12N35. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	FDP12N35, FDPF12N35
Manufacturer	Fairchild ↗ Semiconductor
File Size	514.47 KB
Description	350V N-Channel MOSFET
Datasheet	FDPF12N35_FairchildSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: FDP12N35, FDPF12N35. Please refer to the document for exact specifications by model.

FDP12N35 Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

12A, 350V, RDS(on) = 0.38Ω @VGS = 10 V.
Low gate charge ( typical 18 nC).
Low Crss ( typical 15 pF).
Fast switching.
Improved dv/dt capability April 2007 UniFETTM.

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Published: Nov 30, 2024 |