FDP12N35 Datasheet, Mosfet, Fairchild Semiconductor

FDP12N35 Features

  • Mosfet
  • 12A, 350V, RDS(on) = 0.38Ω @VGS = 10 V
  • Low gate charge ( typical 18 nC)
  • Low Crss ( typical 15 pF)
  • Fast switching
  • Improved dv/dt capabil

PDF File Details

Part number:

FDP12N35

Manufacturer:

Fairchild Semiconductor

File Size:

514.47kb

Download:

📄 Datasheet

Description:

350v n-channel mosfet. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS techn

Datasheet Preview: FDP12N35 📥 Download PDF (514.47kb)
Page 2 of FDP12N35 Page 3 of FDP12N35

TAGS

FDP12N35
350V
N-Channel
MOSFET
Fairchild Semiconductor

📁 Related Datasheet

FDP12N50 - N-Channel MOSFET (Fairchild Semiconductor)
FDP12N50 / FDPF12N50 N-Channel MOSFET June 2007 FDP12N50 / FDPF12N50 N-Channel MOSFET 500V, 11.5A, 0.65Ω Features • RDS(on) = 0.55Ω (Typ.)@ VGS = 10.

FDP12N50F - N-Channel MOSFET (Fairchild Semiconductor)
FDP12N50F / FDPF12N50FT N-Channel MOSFET December 2007 UniFETTM FDP12N50F / FDPF12N50FT N-Channel MOSFET 500V, 11.5A, 0.7Ω Features • RDS(on) = 0.59.

FDP12N50NZ - N-Channel MOSFET (Fairchild Semiconductor)
FDP12N50NZ / FDPF12N50NZ — N-Channel UniFETTM II MOSFET FDP12N50NZ / FDPF12N50NZ N-Channel UniFETTM II MOSFET 500 V, 11.5 A, 520 m August 2016 Fe.

FDP12N50NZ - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% .

FDP12N60NZ - N-Channel MOSFET (Fairchild Semiconductor)
FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET March 2013 FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET 600 V, 12 A, 650 m Features.

FDP120AN15A0 - N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
FDP120AN15A0 / FDD120AN15A0 September 2002 FDP120AN15A0 / FDD120AN15A0 N-Channel PowerTrench® MOSFET 150V, 14A, 120mΩ Features • rDS(ON) = 101mΩ (T.

FDP120N10 - MOSFET (Fairchild Semiconductor)
FDP120N10 — N-Channel PowerTrench® MOSFET FDP120N10 N-Channel PowerTrench® MOSFET 100 V, 74 A, 12 mΩ November 2013 Features • RDS(on) = 9.7 mΩ (Typ.

FDP120N10 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FDP120N10 ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: .

FDP100N10 - MOSFET (Fairchild Semiconductor)
FDP100N10 — N-Channel PowerTrench® MOSFET FDP100N10 N-Channel PowerTrench® MOSFET 100 V, 75 A, 10 mΩ November 2013 Features • RDS(on) = 8.2 mΩ (Typ.

FDP100N10 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor FDP100N10 ·FEATURES ·With TO-220 packaging ·Low switching loss ·Ultra low gate charge ·Easy t.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts