FDP150N10 N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor FDP150N10 *.

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Datasheet Specifications

Part number: FDP150N10
Manufacturer: INCHANGE
File Size: 278.72 KB
Datasheet: FDP150N10-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* With TO-220 packaging
* Drain Source Voltage- : VDSS ≥ 100V
* Static drain-source on-resistance: RDS(on) ≤ 15mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 57 A IDM Drain Current-Single Pulsed 228 A PD Total Dissipation 1

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FDP150N10 N-Channel MOSFET INCHANGE

INCHANGE FDP150N10-like datasheet