FDP150N10A N-Channel MOSFET

Fairchild Semiconductor

Description

FDP150N10A * N-Channel PowerTrench® MOSFET FDP150N10A N-Channel PowerTrench® MOSFET 100 V, 50 A, 15 mΩ November 2013 .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resist.

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Datasheet Specifications

Part number: FDP150N10A
Manufacturer: Fairchild Semiconductor
File Size: 764.67 KB
Datasheet: FDP150N10A-FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* RDS(on) = 12.5 mΩ (Typ. ) @ VGS = 10 V, ID = 50 A
* Fast Switching Speed
* Low Gate Charge, QG = 16.2 nC (Typ. )
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability

Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Motor Drives and Uninterruptible Power Supplies
* Micro Solar Inverter D GDS TO-220 G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter D

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FDP150N10A N-Channel MOSFET Fairchild Semiconductor

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