FDP120N10 N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor FDP120N10 *.

📥 Download Datasheet

FDP120N10 Datasheet Preview — Preview of FDP120N10 PDF

Datasheet Specifications

Part number: FDP120N10
Manufacturer: INCHANGE
File Size: 279.04 KB
Datasheet: FDP120N10-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* With TO-220 packaging
* Drain Source Voltage- : VDSS ≥ 100V
* Static drain-source on-resistance: RDS(on) ≤ 12mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 74 A IDM Drain Current-Single Pulsed 296 A PD Total Dissipation 1

FDP120N10 Distributors

📁 Related Datasheet

FDP120AN15A0 FDP12N35 FDP12N50 FDP12N50F FDP12N50NZ FDP12N60NZ

📌 All Tags

FDP120N10 N-Channel MOSFET INCHANGE

INCHANGE FDP120N10-like datasheet