Datasheet Details
- Part number
- FDP047N08
- Manufacturer
- INCHANGE
- File Size
- 278.99 KB
- Datasheet
- FDP047N08-INCHANGE.pdf
- Description
- N-Channel MOSFET
FDP047N08 Description
isc N-Channel MOSFET Transistor FDP047N08 *.
FDP047N08 Features
* With TO-220 packaging
* Drain Source Voltage-
: VDSS ≥ 75V
* Static drain-source on-resistance:
RDS(on) ≤ 4.7mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
FDP047N08 Applications
* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
75
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous;@Tc=25℃
164
A
IDM
Drain Current-Single Pulsed
656
A
PD
Total Dissipation
2
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