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FDP047N08 - N-Channel MOSFET

FDP047N08 Description

isc N-Channel MOSFET Transistor FDP047N08 *.

FDP047N08 Features

* With TO-220 packaging
* Drain Source Voltage- : VDSS ≥ 75V
* Static drain-source on-resistance: RDS(on) ≤ 4.7mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FDP047N08 Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 164 A IDM Drain Current-Single Pulsed 656 A PD Total Dissipation 2

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Datasheet Details

Part number
FDP047N08
Manufacturer
INCHANGE
File Size
278.99 KB
Datasheet
FDP047N08-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE FDP047N08-like datasheet