Datasheet Details
- Part number
- FDP054N10
- Manufacturer
- INCHANGE
- File Size
- 278.52 KB
- Datasheet
- FDP054N10-INCHANGE.pdf
- Description
- N-Channel MOSFET
FDP054N10 Description
isc N-Channel MOSFET Transistor FDP054N10 *.
FDP054N10 Features
* With TO-220 packaging
* Drain Source Voltage-
: VDSS ≥ 100V
* Static drain-source on-resistance:
RDS(on) ≤ 5.5mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
FDP054N10 Applications
* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous;@Tc=25℃
144
A
IDM
Drain Current-Single Pulsed
576
A
PD
Total Dissipation
📁 Related Datasheet
📌 All Tags