Datasheet4U Logo Datasheet4U.com

FDP054N10 - N-Channel MOSFET

FDP054N10 Description

isc N-Channel MOSFET Transistor FDP054N10 *.

FDP054N10 Features

* With TO-220 packaging
* Drain Source Voltage- : VDSS ≥ 100V
* Static drain-source on-resistance: RDS(on) ≤ 5.5mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FDP054N10 Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 144 A IDM Drain Current-Single Pulsed 576 A PD Total Dissipation

📥 Download Datasheet

Preview of FDP054N10 PDF
datasheet Preview Page 2

Datasheet Details

Part number
FDP054N10
Manufacturer
INCHANGE
File Size
278.52 KB
Datasheet
FDP054N10-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

📌 All Tags

INCHANGE FDP054N10-like datasheet