FDP047N10 N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor FDP047N10 *.

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Datasheet Specifications

Part number: FDP047N10
Manufacturer: INCHANGE
File Size: 278.66 KB
Datasheet: FDP047N10-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* With TO-220 packaging
* Drain Source Voltage- : VDSS ≥ 100V
* Static drain-source on-resistance: RDS(on) ≤ 4.7mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 164 A IDM Drain Current-Single Pulsed 656 A PD Total Dissipation

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FDP047N10 N-Channel MOSFET INCHANGE

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