Part FDP047N10
Description N-Channel MOSFET
Category MOSFET
Manufacturer Inchange Semiconductor
Size 278.66 KB
Inchange Semiconductor

FDP047N10 Overview

Key Features

  • With TO-220 packaging
  • Drain Source Voltage- : VDSS ≥ 100V
  • Static drain-source on-resistance: RDS(on) ≤ 4.7mΩ@VGS=10V
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation