Download FDP047N10 Datasheet PDF
Inchange Semiconductor
FDP047N10
FEATURES - With TO-220 packaging - Drain Source Voltage- : VDSS ≥ 100V - Static drain-source on-resistance: RDS(on) ≤ 4.7mΩ@VGS=10V - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - APPLICATIONS - Power supply - Switching applications - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage VGSS Gate-Source Voltage ±20 Drain Current-Continuous;@Tc=25℃ Drain Current-Single Pulsed Total Dissipation Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ - THERMAL CHARACTERISTICS SYMBOL...