FDP030N06B_F102 Datasheet, Mosfet, Fairchild Semiconductor

FDP030N06B_F102 Features

• Mosfet
• RDS(on) = 2.67 mΩ (Typ.) @ VGS = 10 V, ID = 100 A
• Low FOM RDS(on)
• QG
• Low Reverse-Recovery Charge, Qrr = 78 nC
• Soft Reverse-Recovery Bod

PDF File Details

Part number:

FDP030N06B_F102

Manufacturer:

Fairchild Semiconductor

File Size:

646.51kb

Download:

📄 Datasheet

Description:

Mosfet. This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize th

FDP030N06B_F102 Application

• Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Unin

TAGS

FDP030N06B_F102

Fairchild Semiconductor

📁 Related Datasheet

FDP030N06 - MOSFET (Fairchild Semiconductor)
FDP030N06 — N-Channel PowerTrench® MOSFET FDP030N06 N-Channel PowerTrench® MOSFET 60 V, 193 A, 3.2 mΩ November 2013 Features • RDS(on) = 2.6 mΩ (Ty.

FDP030N06 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FDP030N06 ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate dri.

FDP032N08 - MOSFET (Fairchild Semiconductor)
FDP032N08 — N-Channel PowerTrench® MOSFET FDP032N08 N-Channel PowerTrench® MOSFET 75 V, 235 A, 3.2 mΩ November 2013 Features • RDS(on) = 2.5 mΩ (Ty.

FDP032N08 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FDP032N08 ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate dri.

FDP032N08B - MOSFET (Fairchild Semiconductor)
FDP032N08B — N-Channel PowerTrench® MOSFET FDP032N08B N-Channel PowerTrench® MOSFET 80 V, 211 A, 3.3 mΩ November 2013 Features • RDS(on) = 2.85 mΩ .

FDP036N10A - N-Channel MOSFET (Fairchild Semiconductor)
.

FDP036N10A - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FDP036N10A ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance:.

FDP038AN06A0 - N-Channel MOSFET (Fairchild Semiconductor)
FDP038AN06A0 / FDI038AN06A0 August 2002 FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench® MOSFET 60V, 80A, 3.8mΩ Features • r DS(ON) = 3.5mΩ (Typ.).

FDP038AN06A0 - N-Channel MOSFET (ON Semiconductor)
FDP038AN06A0 / FDI038AN06A0 — N-Channel PowerTrench® MOSFET FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench® MOSFET 60 V, 80 A, 3.8 mΩ Features A.

FDP038AN06A0 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor FDP038AN06A0 FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source O.