FDP032N08B MOSFET

Fairchild Semiconductor

Description

FDP032N08B * N-Channel PowerTrench® MOSFET FDP032N08B N-Channel PowerTrench® MOSFET 80 V, 211 A, 3.3 mΩ November 2013 .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resist.

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Datasheet Specifications

Part number: FDP032N08B
Manufacturer: Fairchild Semiconductor
File Size: 674.31 KB
Datasheet: FDP032N08B-FairchildSemiconductor.pdf
Description: MOSFET

Features

* RDS(on) = 2.85 mΩ (Typ. ) @ VGS = 10 V, ID = 50 A
* Low FOM RDS(on)
* QG
* Low Reverse-Recovery Charge, Qrr
* Soft Reverse-Recovery Body Diode
* Enables High Efficiency in Synchronous Rectification
* Fast Switching Speed
* 100% UIL Tested

Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor Drives and Uninterruptible Power Supplies
* Renewable System D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS dv/

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FDP032N08B MOSFET Fairchild Semiconductor

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