FDP032N08
Fairchild Semiconductor
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Mosfet. This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize th
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FDP032N08 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FDP032N08
·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate dri.
FDP032N08B - MOSFET
(Fairchild Semiconductor)
FDP032N08B — N-Channel PowerTrench® MOSFET
FDP032N08B
N-Channel PowerTrench® MOSFET
80 V, 211 A, 3.3 mΩ
November 2013
Features
• RDS(on) = 2.85 mΩ .
FDP030N06 - MOSFET
(Fairchild Semiconductor)
FDP030N06 — N-Channel PowerTrench® MOSFET
FDP030N06
N-Channel PowerTrench® MOSFET
60 V, 193 A, 3.2 mΩ
November 2013
Features
• RDS(on) = 2.6 mΩ (Ty.
FDP030N06 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FDP030N06
·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate dri.
FDP030N06B_F102 - MOSFET
(Fairchild Semiconductor)
FDP030N06B_F102 — N-Channel PowerTrench® MOSFET
FDP030N06B_F102
N-Channel PowerTrench® MOSFET
60 V, 195 A, 3.1 mΩ
November 2013
Features
• RDS(on) .
FDP036N10A - N-Channel MOSFET
(Fairchild Semiconductor)
.
FDP036N10A - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FDP036N10A
·FEATURES ·With TO-220 packaging ·Drain Source Voltage-
: VDSS ≥ 100V ·Static drain-source on-resistance:.
FDP038AN06A0 - N-Channel MOSFET
(Fairchild Semiconductor)
FDP038AN06A0 / FDI038AN06A0
August 2002
FDP038AN06A0 / FDI038AN06A0
N-Channel PowerTrench® MOSFET 60V, 80A, 3.8mΩ
Features
• r DS(ON) = 3.5mΩ (Typ.).
FDP038AN06A0 - N-Channel MOSFET
(ON Semiconductor)
FDP038AN06A0 / FDI038AN06A0 — N-Channel PowerTrench® MOSFET
FDP038AN06A0 / FDI038AN06A0
N-Channel PowerTrench® MOSFET
60 V, 80 A, 3.8 mΩ
Features
A.
FDP038AN06A0 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
FDP038AN06A0
FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage
: VDSS= 60V(Min) ·Static Drain-Source O.