FDP023N08B Datasheet - Fairchild Semiconductor

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FDP023N08B MOSFET

FDP023N08B * N-Channel PowerTrench® MOSFET FDP023N08B N-Channel PowerTrench® MOSFET 75 V, 242 A, 2.35 mΩ November 2013 .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resist.

FDP023N08B-FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FDP023N08B

Manufacturer:

Fairchild Semiconductor

File Size:

643.28 KB

Description:

MOSFET

Features

* RDS(on) = 1.96 mΩ ( Typ. ) @ VGS = 10 V, ID = 75 A
* Low FOM RDS(on)
* QG
* Low Reverse Recovery Charge, Qrr
* Soft Reverse Recovery Body Diode
* Enables Highly Efficiency in Synchronous Rectification
* Fast Switching Speed
* 100% UIL Tested

Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* DC motor Drives and Uninterruptible Power Supplies
* Micro Solar Inverte D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS V

FDP023N08B Distributors

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