FDP023N08B Datasheet (Fairchild Semiconductor)

FDP023N08B, MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Applications * Synchronous Rectification for ATX / Server / Telecom PSU * Batte

FDP023N08B Features

* RDS(on) = 1.96 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A

* Low FOM RDS(on)

* QG

* Low Reverse Recovery Charge, Qrr

* Soft Reverse Recovery Body Diode

* Enables Highly Efficiency in Synchronous Rectification

* Fast Switching Speed

* 100% UIL Tested