Datasheet Details
- Part number
- FDP047N10
- Manufacturer
- Fairchild Semiconductor
- File Size
- 789.12 KB
- Datasheet
- FDP047N10_FairchildSemiconductor.pdf
- Description
- N-Channel MOSFET
FDP047N10 Description
FDP047N10 * N-Channel PowerTrench® MOSFET FDP047N10 N-Channel PowerTrench® MOSFET 100 V, 164 A, 4.7 mΩ November 2013 .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resist.
FDP047N10 Features
* RDS(on) = 3.9 mΩ (Typ. ) @ VGS = 10 V, ID = 75 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low
RDS(on)
* High Power and Current Handling Capability
FDP047N10 Applications
* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor Drives and Uninterruptible Power Supplies
* Micro Solar Inverter
D
GDS
TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol
Parameter
FDP047N
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