FDP047N08
Fairchild Semiconductor
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N-channel mosfet. This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize th
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FDP047N08 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FDP047N08
·FEATURES ·With TO-220 packaging ·Drain Source Voltage-
: VDSS ≥ 75V ·Static drain-source on-resistance:
R.
FDP047N10 - N-Channel MOSFET
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Features
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FDP047N10 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
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·FEATURES ·With TO-220 packaging ·Drain Source Voltage-
: VDSS ≥ 100V ·Static drain-source on-resistance:
.
FDP047AN08A0 - N-Channel MOSFET
(Fairchild Semiconductor)
FDP047AN08A0
April 2002
FDP047AN08A0
N-Channel UltraFET® Trench MOSFET 75V, 80A, 4.7mΩ
Features
• r DS(ON) = 4.0mΩ (Typ.), V GS = 10V, ID = 80A • Qg.
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(ON Semiconductor)
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Description This N−Channel MOSFET is produced using ON Semiconductor’s
a.
FDP045N10A - N-Channel PowerTrench MOSFET
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FDP045N10A / FDI045N10A — N-Channel PowerTrench® MOSFET
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November 2013
Fe.
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November 2013
Features
• RDS(on) = 1.65 mΩ ( .
FDP023N08B - MOSFET
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FDP023N08B — N-Channel PowerTrench® MOSFET
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75 V, 242 A, 2.35 mΩ
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FDP025N06 — N-Channel PowerTrench® MOSFET
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• RDS(on) = 1.9 mΩ (Ty.
FDP027N08B - N-Channel MOSFET
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Features
• RDS(on) = 2.21 mΩ ( Typ.) @ VGS =.