Datasheet Details
- Part number
- FDP047N08
- Manufacturer
- Fairchild Semiconductor
- File Size
- 608.44 KB
- Datasheet
- FDP047N08_FairchildSemiconductor.pdf
- Description
- N-Channel MOSFET
FDP047N08 Description
FDP047N08 * N-Channel PowerTrench® MOSFET FDP047N08 N-Channel PowerTrench® MOSFET 75 V, 164 A, 4.7 mΩ November 2013 .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resist.
FDP047N08 Features
* RDS(on) = 3.8 mΩ (Typ. ) @ VGS = 10 V, ID = 80 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low
RDS(on)
* High Power and Current Handling Capability
FDP047N08 Applications
* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor Drives and Uninterruptible Power Supplies
D
GDS
TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol
Parameter
FDP047N08
VDSS VGSS
ID
IDM EAS dv/dt
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