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FDP12N50

N-Channel MOSFET

FDP12N50 Features

* RDS(on) = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A

* Low gate charge ( Typ. 22nC)

* Low Crss ( Typ. 11pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* RoHS compliant UniFETTM tm Description These N-Channel enhancement mode

FDP12N50 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FDP12N50 Datasheet (630.71 KB)

Preview of FDP12N50 PDF

Datasheet Details

Part number:

FDP12N50

Manufacturer:

Fairchild Semiconductor

File Size:

630.71 KB

Description:

N-channel mosfet.

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TAGS

FDP12N50 N-Channel MOSFET Fairchild Semiconductor

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