FDP10N50F MOSFET

Fairchild Semiconductor

Description

FDP10N50F / FDPF10N50FT N-Channel MOSFET FDP10N50F / FDPF10N50FT N-Channel MOSFET 500V, 9A, 0.85Ω .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FDP10N50F
Manufacturer: Fairchild Semiconductor
File Size: 613.60 KB
Datasheet: FDP10N50F-FairchildSemiconductor.pdf
Description: MOSFET

Features

* RDS(on) = 0.71Ω ( Typ. ) @ VGS = 10V, ID = 4.5A
* Low Gate Charge ( Typ. 18nC)
* Low Crss ( Typ. 10pF)
* Fast Switching
* 100% Avalanche Tested
* Improved dv/dt Capability

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FDP10N50F MOSFET Fairchild Semiconductor

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