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FDP10N50F

MOSFET

FDP10N50F Features

* RDS(on) = 0.71Ω ( Typ.) @ VGS = 10V, ID = 4.5A

* Low Gate Charge ( Typ. 18nC)

* Low Crss ( Typ. 10pF)

* Fast Switching

* 100% Avalanche Tested

* Improved dv/dt Capability

* RoHS Compliant January 2009 UniFETTM Description These N-Channel enh

FDP10N50F General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in.

FDP10N50F Datasheet (613.60 KB)

Preview of FDP10N50F PDF

Datasheet Details

Part number:

FDP10N50F

Manufacturer:

Fairchild Semiconductor

File Size:

613.60 KB

Description:

Mosfet.

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FDP10N50F MOSFET Fairchild Semiconductor

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