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FDP10N60ZU

MOSFET

FDP10N60ZU Features

* RDS(on) = 0.65Ω ( Typ.)@ VGS = 10V, ID = 4.5A

* Low gate charge ( Typ. 31nC)

* Low Crss ( Typ. 15pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* RoHS compliant Description These N-Channel enhancement mode power fie

FDP10N60ZU General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in.

FDP10N60ZU Datasheet (482.59 KB)

Preview of FDP10N60ZU PDF

Datasheet Details

Part number:

FDP10N60ZU

Manufacturer:

Fairchild Semiconductor

File Size:

482.59 KB

Description:

Mosfet.

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FDP10N60ZU MOSFET Fairchild Semiconductor

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