FDP10N60ZU Datasheet, Mosfet, Fairchild Semiconductor

FDP10N60ZU Features

  • Mosfet
  • RDS(on) = 0.65Ω ( Typ.)@ VGS = 10V, ID = 4.5A
  • Low gate charge ( Typ. 31nC)
  • Low Crss ( Typ. 15pF)
  • Fast switching
  • 100% avalanche tested <

PDF File Details

Part number:

FDP10N60ZU

Manufacturer:

Fairchild Semiconductor

File Size:

482.59kb

Download:

📄 Datasheet

Description:

Mosfet. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS techn

Datasheet Preview: FDP10N60ZU 📥 Download PDF (482.59kb)
Page 2 of FDP10N60ZU Page 3 of FDP10N60ZU

TAGS

FDP10N60ZU
MOSFET
Fairchild Semiconductor

📁 Related Datasheet

FDP10N60NZ - N-Channel MOSFET (Fairchild Semiconductor)
FDP10N60NZ / FDPF10N60NZ — N-Channel UniFETTM II MOSFET November 2013 N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 mΩ Features • RDS(on) = 640 mΩ (.

FDP10N50F - MOSFET (Fairchild Semiconductor)
FDP10N50F / FDPF10N50FT N-Channel MOSFET FDP10N50F / FDPF10N50FT N-Channel MOSFET 500V, 9A, 0.85Ω Features • RDS(on) = 0.71Ω ( Typ.) @ VGS = 10V, ID .

FDP100N10 - MOSFET (Fairchild Semiconductor)
FDP100N10 — N-Channel PowerTrench® MOSFET FDP100N10 N-Channel PowerTrench® MOSFET 100 V, 75 A, 10 mΩ November 2013 Features • RDS(on) = 8.2 mΩ (Typ.

FDP100N10 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor FDP100N10 ·FEATURES ·With TO-220 packaging ·Low switching loss ·Ultra low gate charge ·Easy t.

FDP10AN06A0 - N-Channel MOSFET (Fairchild Semiconductor)
FDB10AN06A0 / FDP10AN06A0 July 2002 FDB10AN06A0 / FDP10AN06A0 N-Channel PowerTrench® MOSFET 60V, 75A, 10.5mΩ Features • r DS(ON) = 9.5mΩ (Typ.), V G.

FDP120AN15A0 - N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
FDP120AN15A0 / FDD120AN15A0 September 2002 FDP120AN15A0 / FDD120AN15A0 N-Channel PowerTrench® MOSFET 150V, 14A, 120mΩ Features • rDS(ON) = 101mΩ (T.

FDP120N10 - MOSFET (Fairchild Semiconductor)
FDP120N10 — N-Channel PowerTrench® MOSFET FDP120N10 N-Channel PowerTrench® MOSFET 100 V, 74 A, 12 mΩ November 2013 Features • RDS(on) = 9.7 mΩ (Typ.

FDP120N10 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor FDP120N10 ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: .

FDP12N35 - 350V N-Channel MOSFET (Fairchild Semiconductor)
FDP12N35 / FDPF12N35 350V N-Channel MOSFET FDP12N35 / FDPF12N35 350V N-Channel MOSFET Features • 12A, 350V, RDS(on) = 0.38Ω @VGS = 10 V • Low gate ch.

FDP12N50 - N-Channel MOSFET (Fairchild Semiconductor)
FDP12N50 / FDPF12N50 N-Channel MOSFET June 2007 FDP12N50 / FDPF12N50 N-Channel MOSFET 500V, 11.5A, 0.65Ω Features • RDS(on) = 0.55Ω (Typ.)@ VGS = 10.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts