DRAIN Datasheet | Specifications & PDF Download

3PEAK TP1945 / TP1946 / TP1948 1.8V Micropower, RRIO, Open-Drain Output Comparators Features Description  Down to 1.8V Supply Voltage: 1.8V to 5.

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Primary lithium battery BA 5567 3 V Primary lithium sulfur High drain capability dioxide (Li-SO2) 1/3 C-size spiral cell ■ ■ ■ ■ ■ ■ ■ ■

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1 TC4404 TC4405 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS FEATURES s Independently-Programmable Rise and Fall Times s Low Output Impedance

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RS331, RS393, RS339 General-Purpose Low-Voltage Open-Drain Output Comparator 1 FEATURES • Supply Range: +1.8V to +5.5V • Low Supply Current 50μA (TYP

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TC4404/TC4405 1.5A Dual Open-Drain MOSFET Drivers Features General Description • Independently Programmable Rise and Fall Times • Low Output Impeda

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RS331, RS393, RS339 General-Purpose Low-Voltage Open-Drain Output Comparator 1 FEATURES • Supply Range: +1.8V to +5.5V • Low Supply Current 50μA (TYP

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LMV331TP / LMV393TP General Purpose, 1.8V, RRI, Open-Drain Output Comparators Features Description  Down to 1.8V Supply Voltage: 1.8V to 5.5V  L

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Primary lithium batteries G 26 3.0 V Primary lithium-sulfur dioxide (Li-SO 2) High drain capability D - size spiral cell Benefits • High and stable

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Voltage 0.02 min. +0 1.65 –0.15 Data Sheet Description : Silver Oxide Low Drain Button Cell Nominal Voltage : 1.55 Volts Dimensions Application

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www.DataSheet4U.com 1 Related Products: Motor Operated Auto Drain Series ADM200 Model/Specifications Reliably discharges even highly viscous draina

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SEMICONDUCTOR TECHNICAL DATA General Description The K3520PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitat

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IDT74LVC07A 3.3V CMOS HEX BUFFER/DRIVER WITH OPEN-DRAIN OUTPUTS INDUSTRIAL TEMPERATURE RANGE 3.3V CMOS HEX BUFFER/DRIVER WITH OPEN-DRAIN OUTPUTS AND

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July 2001 AO8800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8800 uses advanced trench technology

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AO8814 20V Common-Drain Dual N-Channel MOSFET General Description The AO8814 uses advanced trench technology to provide excellent RDS(ON), low gate c

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www.DataSheet4U.com AO8816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8816 uses advanced trench t

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3PEAK TP1945 / TP1946 / TP1948 1.8V Micropower, RRIO, Open-Drain Output Comparators Features Description  Down to 1.8V Supply Voltage: 1.8V to 5.

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AOCA33103E 12V Common-Drain Dual N-Channel MOSFET General Description • Trench Power MOSFET technology • Ultra low RSS(ON) • Common drain configurati

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AOCA32116E 20V Common-Drain Dual N-Channel MOSFET General Description • Trench Power MOSFET technology • Ultra low RSS(ON) • Common drain configurati

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HCS05MS September 1995 Radiation Hardened Hex Inverter with Open Drain Pinouts 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 C

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HV4530 HV4630 32-Channel Serial To Parallel Converter with P-Channel Open Drain Outputs Ordering Information Device HV4530 HV4630 Recommended Operatin

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