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DSBG Device Solutions Business Group US18650VTC4 Tentative Technical Information Sony Energy Devices Corporation Department 1 Energy Division 1 1 Gen

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SURFACE MOUNT High capacitance range complimenting the standard DS range CERAMIC SMD MULTI-LAYER HIGH CAPACITANCE DS www.DataSheet4U.com Ava

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DSB60C45HB 45 V, 2 x 30 A High-Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Features ■ Extremely low switching losses Diode D

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R1LV0414D Series 4M SRAM (256-kword × 16-bit) REJ03C0312-0100 Rev.1.00 May.24.2007 Description The R1LV0414D is a 4-Mbit static RAM organized 256-kwo

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R1RP0416D Series 4M High Speed SRAM (256-kword × 16-bit) Datasheet R10DS0284EJ0100 Rev.1.00 Nov.18.19 Description The R1RP0416D Series is a 4-Mbit h

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community LM20 SNIS106Q – DECEMBER 1999 – REVISED JANUARY 2015 LM20 2.

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R1RP0416DI Series Wide Temperature Version 4M High Speed SRAM (256-kword × 16-bit) Datasheet R10DS0285EJ0100 Rev.1.00 Nov.18.19 Description The R1RP

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GSDSBAT54T/54ST Schottky Barrier Diodes Product Description Schottky Diodes 150mW / 30V Features  Low Forward Voltage Drop  RoHS Compliant  Green

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GSDSBAT54 Series Surface Mount Schottky Barrier Diodes Product Description Small signal schottky diodes 300mA / 30V. Features „ Low Turn-on Voltage

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R1RW0416D Series 4M High Speed SRAM (256-kword × 16-bit) Datasheet R10DS0282EJ0100 Rev.1.00 Nov.18.19 Description The R1RW0416D is a 4-Mbit high spe

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SMD VC-TCXO/TCXO DSA211SCM/DSA221SCM/DSA321SCM/DSA535SC DSB211SCM/DSB221SCM/DSB321SCM/DSB211SCB/DSB221SCB/DSB321SCB/DSB535SC Actual size DSA211SCM DS

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TESTING 4,000 V BREAKDOWN VOLTAGE DS RELAYS DS-BT RELAYS FEATURES 20.65 .813 10.65 .419 10.5 .413 •4,000 V breakdown voltage •Reinforced insulatio

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R1RW0416D Series 4M High Speed SRAM (256-kword × 16-bit) Datasheet R10DS0282EJ0100 Rev.1.00 Nov.18.19 Description The R1RW0416D is a 4-Mbit high spe

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R1RW0416D Series 4M High Speed SRAM (256-kword × 16-bit) Datasheet R10DS0282EJ0100 Rev.1.00 Nov.18.19 Description The R1RW0416D is a 4-Mbit high spe

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1N5818-1, 1N5819-1, 1N6759-1 – 1N6761-1 and DSB1A20 – DSB1A100 Available on commercial versions 1 Amp Schottky Barrier Rectifiers Qualified per MIL-

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R1RP0416D Series 4M High Speed SRAM (256-kword × 16-bit) Datasheet R10DS0284EJ0100 Rev.1.00 Nov.18.19 Description The R1RP0416D Series is a 4-Mbit h

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SMD VC-TCXO/TCXO DSA211SCM/DSA221SCM/DSA321SCM/DSA535SC DSB211SCM/DSB221SCM/DSB321SCM/DSB211SCB/DSB221SCB/DSB321SCB/DSB535SC Actual size DSA211SCM DS

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• 1N5819-1 AND 1N6761-1AVAILABLE IN JAN,JANTX, JANTXV, AND JANS PER MIL-PRF-19500/586 • 1 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • META

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TESTING 4,000 V BREAKDOWN VOLTAGE DS RELAYS DS-BT RELAYS FEATURES 20.65 .813 10.65 .419 10.5 .413 •4,000 V breakdown voltage •Reinforced insulatio

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TESTING 4,000 V BREAKDOWN VOLTAGE DS RELAYS DS-BT RELAYS FEATURES 20.65 .813 10.65 .419 10.5 .413 •4,000 V breakdown voltage •Reinforced insulatio

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