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DXT5551 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

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Dc Components

DXT5551 - TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

www.DataSheet4U.com DC COMPONENTS CO., LTD. R DXT5551 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Descrip.
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Diodes

DXT5551P5 - NPN HIGH VOLTAGE POWER TRANSISTOR

ADVANCE INFORMATION Features and Benefits • 43% smaller than SOT223; 60% smaller than TO252 • Maximum height just 1.1mm • Rated up to 2.25W • BVCEO >.
Rating: 1 (2 votes)
Diodes

DXT5551 - NPN TRANSISTOR

Features  BVCEO > 160V  IC = 600mA High Collector Current  Complementary PNP Type: DXT5401  Ideal for Medium Power Switching or Amplification Appl.
Rating: 1 (1 votes)
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