Darlington-transistor Datasheet | Specifications & PDF Download

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ULN2003A, ULQ2003A High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well su

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DATA SHEET www.onsemi.com NPN Epitaxial Silicon Darlington Transistor KSP13 Features • Collector−Emitter Voltage: VCES=30 V • Collector Power Dissi

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD777/D Plastic Darlington Complementary Silicon Power Transistors . . . designed for

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SavantIC Semiconductor Silicon NPN Darlington Power Transistors Product Specification TIP120/121/122 DESCRIPTION ·With TO-220C package ·DARLINGTON ·

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KSP13/14 KSP13/14 Darlington Transistor • Collector-Emitter Voltage: VCES=30V • Collector Power Dissipation: PC (max)=625mW 1 TO-92 1. Emitter 2.

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® BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DE

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® BDX33B BDX33C BDX34B BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The BDX33B and BDX33C are silicon Epitaxial-Base NPN po

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MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are

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MJD112 MJD117 Complementary power Darlington transistors Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with

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TIP120 / TIP121 / TIP122 — NPN Epitaxial Darlington Transistor November 2014 TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor Features •

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MJD112 MJD117 Complementary power Darlington transistors Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor MJ11016 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) ·

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1410 DESCRIPTION ·Collector-Emitter Sustaining Vol

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