Panasonic
MIP2E1DMU - Silicon MOS-type integrated circuit
MIP2E1DMU
MOS
(IPD)
■ • •
■ •
■ Ta = 25°C ± 3°C
VD 700 VC 10 ID 0.43 IDP 0.61 IC 0.1 Tch 150 Tstg −55 ∼ +150
V V A A A °C °C
■ •
U-G4 •
1: Contro
(4 views)
EIC
SME1D - HIGH EFFICIENT RECTIFIER
TH97/2478
TH09/2479
IATF 0060636 SGS TH07/1033
SME1A -SME1K
PRV : 50 - 800 Volts Io : 1.0 Ampere
FEATURES :
* Glass passivated junction chip * High
(4 views)
Renesas Technology
RJK03E1DNS - Silicon N Channel Power MOS FET
Preliminary www.DataSheet4U.com Datasheet
RJK03E1DNS
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V g
(3 views)
Panasonic
MIP2E1DMC - IPD
(IPD)
MIP2E1DMC (
MOS
I
• •
)
Unit : mm
(1.4)
10.5±0.3 4.6±0.2 1.4±0.1
3.0±0.5 0 to 0.5
1.4±0.1 0.8±0.1 2.54±0.3 2.5±0.2
I
Ta = 25°C ± 3°C
VD VC
(3 views)
Matsushita
MIP2E1D - High-Performance IPD for Battery Chaegers
I
(MIP022X)
IPD
I
G(
12 V/3 A
: 100 VAC
0.3 W
: 100 VAC
G IPD
(MIP022X)
MIP022X
G
IPD
IPD PWM
60 W
: 1/20)
; 70 mW, ; 70 ,
264 VAC 26
(3 views)
Silikron
SMG120N40E1DA - IGBT
Main Product Characteristics:
VCES
1250V
IC
40A
VCE(sat)
1.75V
GC E
TO - 247
Features and Benefits:
◼ Trench FS technology offering ◼ High spe
(3 views)
Panasonic
MIP2E1DMTSCF - Silicon MOSFET
(2 views)
Panasonic
MIP2E1DMS - Silicon MOS-type integrated circuit
インテリジェントパワーデバイス (IPD)
MIP2E1DMS
シリコン MOS
のをに によりリアルタイムのが
スイッチング
Ta = 25°C±3°C
ドレイン コントロール ピーク コントロール チャネル
VD VC ID IDP IC Tch
(2 views)
Huajing Microelectronics
3DD13003E1D - NPN Transistor
(2 views)
Yangzhou Yangjie
E1DFS - Surface Mount Super Fast Recovery Rectifier
E1AFS THRU E1JFS Surface Mount Super Fast Recovery Rectifier
RoHS
COMPLIANT
Features
● Low profile package ● Ideal for automated placement ● Glass p
(2 views)
Yangzhou Yangjie
E1D - Surface Mount Super Fast Recovery Rectifier
E1A THRU E1J Surface Mount Super Fast Recovery Rectifier
RoHS
COMPLIANT
Features
● Low profile package ● Ideal for automated placement ● Glass passi
(2 views)
Intersil Corporation
HGTH20N40E1D - N-Channel IGBT
(1 views)
Intersil Corporation
HGTH20N50E1D - N-Channel IGBT
(1 views)
Intersil Corporation
HGTP10N40E1D - N-Channel IGBT
HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
April 1995
10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
Package
JEDE
(1 views)
Intersil Corporation
HGTP10N50E1D - N-Channel IGBT
HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
April 1995
10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
Package
JEDE
(1 views)
General Semiconductor
FE1D - GLASS PASSIVATED FAST EFFICIENT RECTIFIER
FE1A THRU FE1D
GLASS PASSIVATED FAST EFFICIENT RECTIFIER
Reverse Voltage - 50 to 200 Volts
* D
Forward Current - 1.0 Ampere
FEATURES
♦ High temperatu
(1 views)
Sharp
LQ181E1DG01 - Color TFT-LCD Module for OA/Multimedia use(Desktop PC/Monitor)
Under Development
LQ181E1DG01
Features
n n n Display size : 46 cm [18.1 ], SXGA format Super V*
* Super View
Color TFT-LCD Module for OA/Multimedi
(1 views)
Sharp
LQ181E1DG11 - Color TFT-LCD Module(Desktop PC/Monitor)
Under Development
LQ181E1DG11
Features
s 46 cm [18.1 ] SXGA format s Super V (Super Viewing angle)
Color TFT-LCD Module
(Desktop PC/Monitor)
s High
(1 views)
GOOD-ARK Electronics
SE1D - SURFACE MOUNT HIGH EFFICIENCY RECTIFIER
SE1A THRU SE1M
SURFACE MOUNT HIGH EFFICIENCY RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
Features
For surface mounted a
(1 views)
EIC discrete
SE1D - SURFACE MOUNT HIGH EFFICIENT RECTIFIERS
SE1A -SE1M
PRV : 50 - 1000 Volts Io : 1.0 Ampere
FEATURES :
* * * * * * High current capability High surge current capability High reliability Low rev
(1 views)