Panasonic
MIP2E1DMU - Silicon MOS-type integrated circuit
MIP2E1DMU
MOS
(IPD)
■ • •
■ •
■ Ta = 25°C ± 3°C
VD 700 VC 10 ID 0.43 IDP 0.61 IC 0.1 Tch 150 Tstg −55 ∼ +150
V V A A A °C °C
■ •
U-G4 •
1: Contro
(10 views)
Matsushita
MIP2E1D - High-Performance IPD for Battery Chaegers
I
(MIP022X)
IPD
I
G(
12 V/3 A
: 100 VAC
0.3 W
: 100 VAC
G IPD
(MIP022X)
MIP022X
G
IPD
IPD PWM
60 W
: 1/20)
; 70 mW, ; 70 ,
264 VAC 26
(9 views)
Intersil Corporation
HGTP10N40E1D - N-Channel IGBT
HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
April 1995
10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
Package
JEDE
(7 views)
General Semiconductor
FE1D - GLASS PASSIVATED FAST EFFICIENT RECTIFIER
FE1A THRU FE1D
GLASS PASSIVATED FAST EFFICIENT RECTIFIER
Reverse Voltage - 50 to 200 Volts
* D
Forward Current - 1.0 Ampere
FEATURES
♦ High temperatu
(7 views)
Panasonic
MIP2E1DMTSCF - Silicon MOSFET
(7 views)
Huajing Microelectronics
3DD13003E1D - NPN Transistor
(7 views)
JILIN SINO
3DD13003E1D - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
R
3DD13003E1D
MAIN CHARACTERISTICS
IC 1.5A
VCEO
400V
PC(TO-92)
1W
Package
z z z z
(7 views)
Intersil Corporation
HGTH20N50E1D - N-Channel IGBT
(6 views)
OptoSupply International
OSR5PAZ4E1D - Super Flux Premium Red LED
Super Flux Pr emium Red LED www.DataSheet4U.com OSR5PAZ4E1D ■Features
●
■Outline
Dimension
7.62
High Luminous Super Flux Output Arc Standard Direct
(6 views)
Sharp
LQ180E1DG44 - LCD
www.DataSheet4U.net
www.DataSheet4U.net
www.DataSheet4U.net
LD-13110A
RECORDS OF REVISION
LQ181E1DG44 SPEC No. LD-13110 LD-13110A DATE Feb. 1.2001
(6 views)
Yangzhou Yangjie
E1D - Surface Mount Super Fast Recovery Rectifier
E1A THRU E1J Surface Mount Super Fast Recovery Rectifier
RoHS
COMPLIANT
Features
● Low profile package ● Ideal for automated placement ● Glass passi
(6 views)
Intersil Corporation
HGTP10N50E1D - N-Channel IGBT
HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
April 1995
10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
Package
JEDE
(5 views)
Sharp
LQ181E1DW21 - TFT LCD
(5 views)
Silikron
SMG120N40E1DA - IGBT
Main Product Characteristics:
VCES
1250V
IC
40A
VCE(sat)
1.75V
GC E
TO - 247
Features and Benefits:
◼ Trench FS technology offering ◼ High spe
(5 views)
Intersil Corporation
HGTH20N40E1D - N-Channel IGBT
(4 views)
Diotec Semiconductor
SFE1D - Superfast Switching Surface Mount Si-Rectifiers
SFE 1A … SFE 1M Superfast Switching Surface Mount Si-Rectifiers Superschnelle Si-Gleichrichter für die Oberflächenmontage
Nominal current – Nennstrom
(4 views)
Renesas Technology
RJK03E1DNS - Silicon N Channel Power MOS FET
Preliminary www.DataSheet4U.com Datasheet
RJK03E1DNS
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V g
(4 views)
Panasonic
MIP2E1DMC - IPD
(IPD)
MIP2E1DMC (
MOS
I
• •
)
Unit : mm
(1.4)
10.5±0.3 4.6±0.2 1.4±0.1
3.0±0.5 0 to 0.5
1.4±0.1 0.8±0.1 2.54±0.3 2.5±0.2
I
Ta = 25°C ± 3°C
VD VC
(4 views)
Guangzhou Juxing Electronic
MAHE1D - Surface Mount Ultra Fast Rectifiers
MAHE1A~MAHE1M
Surface Mount Ultra Fast Rectifiers
Features
● ● ● ● ● ● ●
Low profile package Ideal for automated placement Glass passivated chip junc
(4 views)
EIC
FE1D - SUPER FAST RECTIFIERS
TH97/10561QM
TW00/17276EM
IATF 0060636 SGS TH07/1033
FE1A ~ FE1G
SUPER FAST RECTIFIERS
PRV : 50 - 400 Volts Io : 1.0 Amperes
FEATURES :
* Superfa
(4 views)