EC2612 Datasheet | Specifications & PDF Download

EC2612-99F 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612-99F is based on a 0.15µm gate pseudomor

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EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate ps

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www.DataSheet.co.kr Ordering number : ENA0656 VEC2612 SANYO Semiconductors DATA SHEET VEC2612 Features • • N-Channel and P-Channel Silicon MOSFE

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