EK02 Datasheet | Specifications & PDF Download

Schottky Barrier Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot 20V Electrical

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CEK02N7G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 700V, 0.4A, RDS(ON) = 6.75 Ω @VGS = 10V. High dense cell design fo

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CEK02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 0.4A, RDS(ON) = 8.5 Ω @VGS = 10V. High dense cell design for extremely low

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Schottky Barrier Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot 20V Electrical

(10 views)