100 V, 66 A, 8.8 mΩ Low RDS(ON) N ch Trench Power.
SANKEN
EKI10126 - N Channel Trench Power MOSFET
100 V, 66 A, 8.8 mΩ Low RDS(ON) N ch Trench Power MOSFET EKI10126 Features V(BR)DSS --------------------------------100 V (ID = 100 µA) ID ------.
INCHANGE
EKI10126 - N-Channel MOSFET
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=66A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : .
