EL-314 Datasheet | Specifications & PDF Download

Princeton Technology Corp. Tel : 886-2-29162151 Fax : 886-2-29174598 URL: http://www.princeton.com.tw 4-Channel Input Audio Processor IC PT2314 D

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4-Channel Input Audio Processor 7314 DESCRIPTION 7314 is a four-channel input digital audio processor utilizing CMOS Technology. Volume, Bass, Trebl

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Micrel, Inc. QUINT DIFFERENTIAL LINE RECEIVER SY100S314 SY100S314 FEATURES DESCRIPTION ■ Max. propagation delay of 900ps ■ Differential outputs

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CSC2314F CSC2314F CMOS ， 、、 。 。 ， I2C 。 z 。 z 。 z CMOS 。 z 。 z 4 。 z 。 z 、、。 z （ 1.25 dB）。 z 。 z 。 z -。 z -。 z I2C 。 SOP 28 1

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AOSP32314 30V N-Channel MOSFET General Description • Latest advanced trench technology • Low RDS(ON) • High Current capability • RoHS and Halogen-Fre

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www.DataSheet4U.com 3D3314 MONOLITHIC QUAD FIXED DELAY LINE (SERIES 3D3314) FEATURES • • • • • • • • • • • All-silicon, low-power 3.3V CMOS technolo

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K3314-VB www.VBsemi.com K3314-VB Datasheet N-Channel 600 V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) at 25 °C (Ω) Qg Typ.

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SM2314NSA-VB SM2314NSA-VB Datasheet N-Channel 20 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.04

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Etek Microelectronics ET2314 4-Channel Input Audio Processor General Description ET2314 is a four-channel input digital audio processor utilizing CM

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AONS36314 30V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS

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EiceDRIVER™ 2ED314xMC12L (2ED-X3 Compact) Datasheet 2ED314xMC12L (2ED-X3 Compact) Dual-channel isolated gate driver IC with dead-time control Features

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HM2314B N-Channel Enhancement Mode Power MOSFET Description The HM2314B uses advanced trench technology to provide excellent RDS(ON), low gate charge

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EiceDRIVER™ 2ED314xMC12L (2ED-X3 Compact) Datasheet 2ED314xMC12L (2ED-X3 Compact) Dual-channel isolated gate driver IC with dead-time control Features

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DESCRIPTION The SSF3314E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V

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EiceDRIVER™ 2ED314xMC12L (2ED-X3 Compact) Datasheet 2ED314xMC12L (2ED-X3 Compact) Dual-channel isolated gate driver IC with dead-time control Features

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CSC2314F CSC2314F CMOS ，、、 。。 ， I2C 。 CSC2314F SOP28 。 z CMOS 。 z 。 z 4 。 z 。 z 、、。 z （ 1.25 dB）。 z 。 z 。 z -。 z -。 z I2C 。 z 。 z 。 CSC2314F

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AONS32314 30V N-Channel MOSFET General Description • Latest advanced trench technology • Low RDS(ON) • High Current capability • RoHS and Halogen-Fre

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ELM1314-30F/001 Ku-Band Internally Matched FET FEATURES •High Output Power: P1dB=44.5dBm(typ.) •High Gain: G1dB=5.5dB(typ.) •High PAE: ηadd=22%(typ.)

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EiceDRIVER™ 2ED314xMC12L (2ED-X3 Compact) Datasheet 2ED314xMC12L (2ED-X3 Compact) Dual-channel isolated gate driver IC with dead-time control Features

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